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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 300 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHTA92ZPT CURRENT 0.5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *PNP SILICON Transistor 0.9+0.2 MARKING * ZHP 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. -300 -300 -5 -500 2 +150 150 +150 UNIT V V V mA W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHTA92ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -200 V VEB = - 3 . 0 V IC = -1 mA; VCE = -10V IC = -10 mA; VCE =-10V IC = -30 mA; VCE =-10V IC=-20mA, IB=-2.0mA IC=-20mA, IB=-2.0mA IC = 10 mA; VCE=-20V ; f = 100MHz VCB=20V, IE=0, f=1.0MHZ - - 25 40 40 - - 50 - MIN. MAX. -250 -100 - - UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 104 UNIT K/W VCE(sat) VBE(sat) fT Cob collector-emitter saturation voltage base-emitter saturation voltage transition frequency collector capacitance -0.5 -0.9 - 6.0 V V pF |
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